收藏本站
Si2303BDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.200 at V GS = - 10 V
0.380 at V GS = - 4.5 V
I D (A) b
- 1.64
- 1.0
? Halogen-free Option Available
P b -free
A v aila b le
RoHS*
COMPLIANT
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2303BDS (L3)*
* Marking Code
Ordering Information: Si2303BDS-T1
Si2303BDS-T1-E3 (Lead (Pb)-free)
Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) b
Pulsed Drain Current a
T A = 25 °C
T A = 70 °C
I D
I DM
- 1.64
- 1.31
- 10
- 1.49
- 1.2
A
Continuous Source Current (Diode Conduction) b
I S
- 0.75
- 0.6
Power Dissipation b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
0.9
0.57
- 55 to 150
0.7
0.45
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b
Maximum Junction-to-Ambient c
Symbol
R thJA
Typical
120
140
Maximum
145
175
Unit
°C/W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI2304BDS-T1-GE3 MOSFET N-CH 30V 2.6A SOT23-3
SI2304DDS-T1-GE3 MOSFET N-CH 30V 3.6A SOT23
SI2305ADS-T1-E3 MOSFET P-CH 8V 5.4A SOT23-3
SI2305CDS-T1-GE3 MOSFET P-CH 8V 5.8A SOT23-3
SI2305DS-T1-GE3 MOSFET P-CH 8V 3.5A SOT23-3
SI2306BDS-T1-GE3 MOSFET N-CH 30V 3.16A SOT23-3
SI2307BDS-T1-GE3 MOSFET P-CH 30V 2.5A SOT23-3
SI2307CDS-T1-E3 MOSFET P-CH 30V 3.5A SOT23-3
相关代理商/技术参数
SI2303CDS 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI2303CDS_13 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
Si2303CDS-T1-E3 功能描述:MOSFET 30V 2.7A 2.3W 190mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI2303CDS-T1-GE3 功能描述:MOSFET 30V 2.7A 2.3W 190 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI2303CDS-T1-GE3 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET -30V 2.7A TO-236 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET, -30V, 2.7A TO-236
SI2303DS 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI2303DST1 制造商:Vishay Intertechnologies 功能描述:
SI2303DS-T1 功能描述:MOSFET 30V 1.7A 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube